Enhanced thermoelectric efficiency in topological insulator Bi2Te3 nanoplates via atomic layer deposition-based surface passivation
نویسندگان
چکیده
منابع مشابه
AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition
We report a low current collapse GaN-based high electron mobility transistor (HEMT) with an excellent thermal stability at 150 °C. The AlN was grown by N2-based plasma enhanced atomic layer deposition (PEALD) and shown a refractive index of 1.94 at 633 nm of wavelength. Prior to deposit AlN on III-nitrides, the H2/NH3 plasma pre-treatment led to remove the native gallium oxide. The X-ray photoe...
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 2018
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.5030674